IRF7324
IRF7324,双P沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=-20V,VGs Max=12V,RDS(on) Max 4.5V=18mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF9362
IRF9362,双P沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=-30V,VGs Max=20V,RDS(on) Max 4.5V=32mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7104
IRF7104,双P沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=-20V,VGs Max=12V,RDS(on) Max 4.5V=400mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7389
IRF7389,1N-1P双沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on)4.5V N-ch=46.0mOhms,RDS(on)4.5V P-ch=98.0mOhms,RDS(on)10V N-ch=29.0mOhms,RDS(on)10V P-ch=5...
IRF7509
IRF7509,1N-1P双沟道MOS管,由IR原厂生产,Micro 8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on)4.5V N-ch=175.0mOhms,RDS(on)4.5V P-ch=400.0mOhms,RDS(on)10V N-ch=110.0mOhms,RDS(on)10V ...
IRF7380PBF-1
IRF7380PBF-1,双N沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=80V,VGs Max=20V,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7910
IRF7910,双N沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=12V,VGs Max=12V,RDS(on) Max 4.5V=15mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRFH4257D
IRFH4257D,双N沟道MOS管,由IR原厂生产,PQFN 5 x 4封装,参数为:VBrdss=25V,VGs Max=20V,RDS(on) Max 4.5V=1.4mOhms,Rth(JA)=40C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7501
IRF7501,双N沟道MOS管,由IR原厂生产,Micro 8封装,参数为:VBrdss=20V,VGs Max=12V,RDS(on) Max 4.5V=135mOhms,Rth(JA)=100C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF9952
IRF9952,1N-1P双沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on)4.5V N-ch=150.0mOhms,RDS(on)4.5V P-ch=400.0mOhms,RDS(on)10V N-ch=100.0mOhms,RDS(on)10V P-c...
IRF7509PBF-1
IRF7509PBF-1,1N-1P双沟道MOS管,由IR原厂生产,Micro-8封装,参数为:VGs Max=20V,RDS(on)4.5V N-ch=175.0mOhms,RDS(on)4.5V P-ch=400.0mOhms,RDS(on)10V N-ch=110.0mOhms,RDS(on)10V P-ch=2...
IRF6802SD
IRF6802SD,双N沟道MOS管,由IR原厂生产,DirectFET SA封装,参数为:VBrdss=25V,VGs Max=16V,RDS(on) Max 4.5V=5.9mOhms,Rth(JA)=72C/W,库存实时更新.咨询购买请致电:0755-83897562
IRFHM8363
IRFHM8363,双N沟道MOS管,由IR原厂生产,PQFN 3.3 x 3.3 E封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on) Max 4.5V=20.4mOhms,Rth(JA)=47C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7504
IRF7504,双P沟道MOS管,由IR原厂生产,Micro 8封装,参数为:VBrdss=-20V,VGs Max=12V,RDS(on) Max 4.5V=270mOhms,Rth(JA)=100C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF3546M
IRF3546M,60A双集成电源模块,由IR原厂生产,PQFN 6 x 8封装,参数为:VGs Max=20V,Rth(JA)=18.4C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF7303
IRF7303,双N沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on) Max 4.5V=80mOhms,Rth(JA)=62.5C/W,库存实时更新.咨询购买请致电:0755-83897562
IRLHS6276
IRLHS6276,双N沟道MOS管,由IR原厂生产,PQFN 2 x 2封装,参数为:VBrdss=20V,VGs Max=12V,RDS(on) Max 4.5V=45mOhms,Rth(JA)=86C/W,库存实时更新.咨询购买请致电:0755-83897562
IRFHE4250D
IRFHE4250D,双N沟道带肖特基的MOS管,由IR原厂生产,PQFN 6 x 6封装,参数为:VBrdss=25V,VGs Max=16V,RDS(on) Max 4.5V=1.0mOhms,Rth(JA)=24C/W,库存实时更新.咨询购买请致电:0755-83897562
IRF8513
IRF8513,双N沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on) Max 4.5V=16.9mOhms,Rth(JA)=62.5 (Q2)C/W,库存实时更新.咨询购买请致电:0755-83897562
IRFHM792
IRFHM792,双N沟道MOS管,由IR原厂生产,PQFN 3.3 x 3.3 E封装,参数为:VBrdss=100V,VGs Max=20V,Rth(JA)=55C/W,库存实时更新.咨询购买请致电:0755-83897562