F1241NBGI8
F1241NBGI8,射频运放芯片,RF Amp Chip Dual Gain Amplifier 500MHz 5.25V,品牌:IDT,封装:32VFQFPN,咨询购买请致电:0755-83897562
- Description：RF Amp Chip Dual Gain Amplifier 500MHz 5.25V 32-Pin VFQFPN T/R
- 品牌：IDT
- 封装：32VFQFPN
- 描述：射频运放芯片,RF Amp Chip Dual Gain Amplifier 500MHz 5.25V
- DataSheet：数据手册 pdf
电气特性 Features
| Number of Channels per Chip: | 2 |
| Type: | Gain Amplifier |
| Typical Output Power: | 20.4@200MHz dBm |
| Typical Power Gain: | 20.2@200MHz dB |
| Maximum Operating Frequency Range: | 10 to 500 MHz |
| Typical Noise Figure: | 5.5@200MHz dB |
| Typical Output Intercept Point: | 48@200MHz dBm |
| Typical Single Supply Voltage: | 5 V |
| Maximum Power Dissipation: | 1500 mW |
| Maximum Supply Current: | 176@5V mA |
| Rad Hard: | No |
- Description：RF Amp Chip Dual Gain Amplifier 500MHz 5.25V 32-Pin VFQFPN T/R
- 品牌：IDT
- 封装：32VFQFPN
- 描述：射频运放芯片,RF Amp Chip Dual Gain Amplifier 500MHz 5.25V
- DataSheet：数据手册 pdf
