IRF5803
IRF5803,P沟道功率MOS管,由IR原厂生产,TSOP-6 (Micro 6)封装,参数为:VBrdss=-40V,VGs=20V,RDS(on) Max 10V=112.0mOhms,RDS(on) Max 4.5V=190.0mOhms,Qg Typ=25.0nC,Rth(JC)=62.5 (JA)K/W,库存实时更新.咨询购买请致电:0755-83897562
- Description：P-channel Power MOSFET
- 品牌：IR
- 封装：TSOP-6 (Micro 6)
- 描述：P沟道功率MOS管
