IRF630N,N沟道功率MOS管,由IR原厂生产,TO-220AB封装,参数为:VBrds=200V,VGs=20V,RDS(on) Max 10V=300.0mOhms,Id=9.5A,库存实时更新.咨询购买请致电:0755-83897562
SN74LV00APWR低功耗逻辑IC由TI原厂生产,采用T...
24C04B-PU存储器,存储芯片由ATMEL原厂生产,采用...
74HCT86D高速CMOS逻辑IC由NXP原厂生产,采用S...
SN74LV74ADR低功耗CMOS逻辑IC由TI原厂生产,...
AT24C02C-SSHM-T存储器,存储芯片由ATMEL原...
SN74LVTH16244ADGGR低功耗CMOS逻辑IC由...
74HC4024D高速CMOS逻辑IC由NXP原厂生产,采用...
SN74LVC157ADR低功耗CMOS逻辑IC由TI原厂生...
SN74HC138PWR高速CMOS逻辑IC由TI原厂生产,...