IRF5802
IRF5802,N沟道功率MOS管,由IR原厂生产,TSOP-6 (Micro 6)封装,参数为:VBrds=150V,VGs=30V,RDS(on) Max 10V=1200.0mOhms,库存实时更新.咨询购买请致电:0755-83897562
- Description：N-channel Power MOSFET
- 品牌：IR
- 封装：TSOP-6 (Micro 6)
- 描述：N沟道功率MOS管
