注册账号 | 忘记密码
IRFH5304,N沟道功率MOS管,由IR原厂生产,PQFN 5 x 6 B/E封装,参数为:VBrds=30V,VGs=20V,RDS(on) Max 10V=4.5mOhms,库存实时更新.咨询购买请致电:0755-83897562
74HC4060PW高速CMOS逻辑IC由NXP原厂生产,采...
74HC4051D高速CMOS逻辑IC由NXP原厂生产,采用...
SN74LV07APWR低功耗逻辑IC由TI原厂生产,采用T...
AT25320B-SSHL-T存储器,存储芯片由ATMEL原...
74AHC14D先进高速CMOS逻辑IC由NXP原厂生产,采...
AT24C08B-TH-T存储器,存储芯片由ATMEL原厂生...
AT25640AN-10SU27存储器,存储芯片由ATMEL...
SN74AHC373DWR先进高速CMOS逻辑IC由TI原厂...
25256AW-10SU2.7存储器,存储芯片由ATMEL原...