5HN01C-TB-E
5HN01C-TB-E,场效应晶体管,品牌:ON,封装:CP-3,参数:配置:Single; 沟道类型:N沟道; 最大漏源电压:50 V; 最大连续漏极电流:100 mA; 最大门源电压:20 V; 工作温度:-55 to 150 ℃; 安装方式:Surface Mount. 询报价及购买请致电:0755-83897562
- 品牌：ON
- 封装：CP-3
- 描述：N沟道,场效应晶体管,参数:Trans JFET N-CH 50V 0.1A
- Description：Trans JFET N-CH 50V 0.1A 3-Pin CP T/R
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 50 V |
| Maximum Continuous Drain Current: | 100 mA |
| Maximum Gate Source Voltage: | ±20 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
- 品牌：ON
- 封装：CP-3
- 描述：N沟道,场效应晶体管,参数:Trans JFET N-CH 50V 0.1A
- Description：Trans JFET N-CH 50V 0.1A 3-Pin CP T/R
