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KTD998,晶体管,三极管,TO-3P封装,参数为:Pcm=3000mW,Ic=10000mA,BVcbo=120V,BVceo=120V,BVebo=5V,hfe(Min)=55,hfe(Max)=160,Vce(sat)=2.5V,fr=12+MHz,库存实时更新.咨询购买请致电:0755-83897562
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