2SB1167,晶体管,三极管,TO-126封装,参数为:Pcm=1250mW,Ic=3000mA,BVcbo=120V,BVceo=100V,BVebo=6V,hfe(Min)=70,hfe(Max)=280,Vce(sat)=0.5V,fr=130MHz,库存实时更新.咨询购买请致电:0755-83897562
24C04BN-SH-T存储器,存储芯片由ATMEL原厂生产...
AT89C4051-24PU单片机,低功耗高性能的CMOS ...
AT28C64B-15PU存储器,存储芯片由ATMEL原厂生...
MC14094BDTR2G CMOS电路,数字逻辑IC由ON...
74HCT245D高速CMOS逻辑IC由NXP原厂生产,采用...
25128AN-10SI27存储器,存储芯片由ATMEL原厂...
ATF91SAM7X256B-AU-001单片机,高性能,可...
74HCT14D高速CMOS逻辑IC由NXP原厂生产,采用S...
24C64AN-10SU2.7存储器,存储芯片由ATMEL原...