IRF7379
IRF7379,1N-1P双沟道MOS管,由IR原厂生产,SO-8封装,参数为:VBrdss=30V,VGs Max=20V,RDS(on)4.5V N-ch=75.0mOhms,RDS(on)4.5V P-ch=180.0mOhms,RDS(on)10V N-ch=45.0mOhms,RDS(on)10V P-ch=90.0mOhms,Qg Typ N-ch=16.7nC,Qg Typ P-ch=16.7nC,Qgd Typ N-ch=5.3nC,Qgd Typ P-ch=6.0nC,Rth(JA)=50C/W,库存实时更新.咨询购买请致电:0755-83897562
